Review of Methodologies for Evaluating Short-Circuit Robustness and Reliability of SiC Power MOSFETs

High temperature pulsed-gate robustness testing of SiC power MOSFETs

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

simulation and design of electronic processing circuit for restaurants e-procurement system

the poor orientation of the restaurants toward the information technology has yet many unsolved issues in regards to the customers. one of these problems which lead the appeal list of later, and have a negative impact on the prestige of the restaurant is the case when the later does not respond on time to the customers’ needs, and which causes their dissatisfaction. this issue is really sensiti...

Single pulse avalanche robustness and repetitive stress ageing of SiC power MOSFETs

This paper presents an extensive electro-thermal characterisation of latest generation Silicon Carbide (SiC) power MOSFETs under Unclamped Inductive Switching (UIS) conditions. Tests are carried out to thoroughly understand the single pulse avalanche ruggedness limits of commercial SiC MOSFETs and assess their ageing under repetitive stress conditions. Both a functional and a structural charact...

Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

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